UCC27211DPRR

Texas Instruments
595-UCC27211DPRR
UCC27211DPRR

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27211DPRT

ECAD Model:
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In Stock: 2,464

Stock:
2,464 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$2.67 $2.67
$1.98 $19.80
$1.81 $45.25
$1.62 $162.00
$1.52 $380.00
$1.47 $735.00
$1.22 $1,220.00
Full Reel (Order in multiples of 3000)
$1.13 $3,390.00
$1.11 $6,660.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$3.16
Min:
1

Similar Product

Texas Instruments UCC27211DPRT
Texas Instruments
Gate Drivers 120V Boot,4A Peak,Hi Freq Hi/Lo-Side Drv
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
WSON-10
4 A
7.8 V
20 V
8 ns
7 ns
- 40 C
+ 140 C
UCC27211
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

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CNHTS:
8542319000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.