+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TPH6R008QM,LQ

Name: Toshiba TPH6R008QM,LQ
Brand: Toshiba
SKU: 757-TPH6R008QMLQ
Price: 1.49 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TPH6R008QMLQ

Mfr. No:

TPH6R008QM,LQ

Mfr.:

Toshiba

Description:

MOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm

Datasheet:

TPH6R008QM,LQ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TPH6R008QM,LQ

In Stock: 2,837

Stock:: 2,837 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.49	$1.49
	$0.942	$9.42
	$0.626	$62.60
	$0.491	$245.50
	$0.428	$428.00
	$0.421	$1,052.50
	$0.40	$2,000.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V, 80 V
Id - Continuous Drain Current:	107 A
Rds On - Drain-Source Resistance:	6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	38 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	135 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	UMOS9-H
Subcategory:	Transistors
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	26 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TPH6R008QM,LQ Datasheet (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

UMOS9-H Silicon N-channel MOSFETs

Toshiba UMOS9-H Silicon N-channel MOSFETs are ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers. These MOSFETs boast a small gate charge, a small output charge, low drain-source on-resistance, and low leakage current. The UMOS9-H N-channel MOSFETs feature 80V drain-source voltage, ±20V gate-source voltage, and 175°C channel temperature. These MOSFETs also feature ±0.1µA gate leakage current, 10µA drain cut-off current, and a -55°C to 175°C storage temperature range. The UMOS9-H N-channel MOSFETs are RoHS-compliant and come in a 0.108g 2-5W1A (SOP Advance (N)) package.