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SQD50P04-13L_T4GE3

Name: Vishay SQD50P04-13L_T4GE3
Brand: Vishay / Siliconix
SKU: 78-SQD50P04-13LT4GE3
Price: 2.01 USD
Availability: InStock

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Mouser No:

78-SQD50P04-13LT4GE3

Mfr. No:

SQD50P04-13L_T4GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET

Datasheet:

SQD50P04-13L_T4GE3 Datasheet

ECAD Model:

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In Stock: 49,808

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.01	$2.01
	$1.29	$12.90
	$0.866	$86.60
	$0.688	$344.00
	$0.647	$647.00
Full Reel (Order in multiples of 2500)
	$0.613	$1,532.50

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Product Type:	MOSFETs
Series:	SQD
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

SQD50P04-13L_T4GE3 Datasheet

REACH Certificate (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.