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C4D20120H

Name: Wolfspeed C4D20120H
Brand: Wolfspeed
SKU: 941-C4D20120H
Price: 16.99 USD
Availability: InStock

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Mouser No:

941-C4D20120H

Mfr. No:

C4D20120H

Mfr.:

Wolfspeed

Description:

SiC Schottky Diodes 20A 1200V SiC Schottky Diode

Datasheet:

C4D20120H Datasheet

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In Stock: 514

Stock:: 514 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$16.99	$16.99
	$10.50	$105.00
	$10.02	$1,202.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single Dual Anode
If - Forward Current:	54 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	130 A
Ir - Reverse Current:	35 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Wolfspeed
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	246 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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Datasheet

C4D20120H Datasheet

PCN

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

1200V Silicon Carbide Schottky Diodes

Wolfspeed 1200V Silicon Carbide Schottky Diodes feature Merged PiN Schottky (MPS) technology and offer greater robustness and reliability than standard Schottky diodes. These Wolfspeed 1200V diodes come in various packages that can be paralleled without the risk of thermal runaway. The diodes are ideal for solar inverters, switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and AC/DC converters.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

Z-Rec Zero Recovery SiC Diodes

Wolfspeed Z-Rec™ Zero Recovery Silicon Carbide Schottky Diodes are 1200V, 650V, or 600V Schottky rectifiers with a zero reverse recovery current. With high-frequency operation and temperature-independent switching behavior, Wolfspeed Z-Rec Zero Recovery Rectifiers provide extremely fast switching with virtually no switching losses and the ability to parallel devices without thermal runaway, reducing heat sink requirements. The unipolar diodes can replace bipolar rectifiers and are helpful in switch-mode power supplies, power factor correction, and motor drives.

Silicon Carbide (SiC) Schottky Diodes

Wolfspeed Silicon Carbide (SiC) Schottky Diodes are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, industrial power supplies, and consumer electronics. Compared to silicon-based solutions, Wolfspeed Silicon Carbide technology enables increased system power density, higher switching frequencies, smaller designs, cooler components, reduced size of components like inductors, capacitors, filters, and transformers, and overall cost benefits. Wolfspeed SiC diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable than standard Schottky barrier diodes. Wolfspeed's portfolio of SiC Schottky diodes come in various packages to meet diverse application requirements.