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FFSD1065A

Name: onsemi FFSD1065A
Brand: onsemi
SKU: 863-FFSD1065A
Price: 4.49 USD
Availability: InStock

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Mouser No:

863-FFSD1065A

Mfr. No:

FFSD1065A

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 10A SIC SBD

Datasheet:

FFSD1065A Datasheet

ECAD Model:

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More Information

Learn more about onsemi FFSD1065A

In Stock: 1,483

Stock:: 1,483 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.49	$4.49
	$2.97	$29.70
	$2.10	$210.00
	$1.81	$905.00
	$1.77	$1,770.00
Full Reel (Order in multiples of 2500)
	$1.58	$3,950.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	56 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSD1065A
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	CN
Country of Diffusion:	KR
Country of Origin:	CN
Pd - Power Dissipation:	150 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	2500
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	329.241 mg

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Datasheet

FFSD1065A Datasheet

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
MXHTS:: 8541100101
ECCN:: EAR99

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.