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FFSH3065B-F085

Name: onsemi FFSH3065B-F085
Brand: onsemi
SKU: 863-FFSH3065B-F085
Price: 10.29 USD
Availability: InStock

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Mouser No:

863-FFSH3065B-F085

Mfr. No:

FFSH3065B-F085

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 30A SIC SBD

Datasheet:

FFSH3065B-F085 Datasheet

ECAD Model:

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Learn more about onsemi FFSH3065B-F085

In Stock: 419

Stock:: 419 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.29	$10.29
	$6.11	$61.10
	$5.46	$655.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	110 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSH3065B_F085
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	268 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	5.321 g

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Datasheet

FFSH3065B-F085 Datasheet

PCN

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.