NXH450B100H4Q2F2PG

onsemi
863-H450B100H4Q2F2PG
NXH450B100H4Q2F2PG

Mfr.:

Description:
IGBT Modules 1000V75A FSIII IGBT MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS

ECAD Model:
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In Stock: 36

Stock:
36 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 36 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$143.53 $143.53
$130.15 $1,561.80
25,008 Quote

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBT Modules
RoHS:  
SiC IGBT Modules
Dual
1 kV
1.7 V
101 A
800 nA
234 W
- 40 C
+ 150 C
Tray
Brand: onsemi
Country of Assembly: CN
Country of Diffusion: CZ
Country of Origin: CN
Product Type: IGBT Modules
Series: NXH450B100H4Q2
Factory Pack Quantity: 12
Subcategory: IGBTs
Technology: Si
Tradename: EliteSiC
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Attributes selected: 0

USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

NXH450B100H4Q2 Si/SiC Hybrid Modules

onsemi  NXH450B100H4Q2 Si/SiC Hybrid Modules contain two 1000V, 150A IGBTs, two 1200V, 30A SiC diodes, and two 1600V 30A bypass diodes, and an NTC thermistor. These Si/SiC hybrid modules feature low switching loss reduced system power dissipation, low inductive layout, press-fit and solder pin options. The NXH450B100H4Q2 hybrid modules offer -40°C to 125°C in the storage temperature range and -40°C to 125°C in the operating temperature range under switching conditions. These Si/SiC hybrid modules are ideally used in solar inverters and uninterruptible power supplies.