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FFSH4065BDN-F085

Name: onsemi FFSH4065BDN-F085
Brand: onsemi
SKU: 863-FFSH4065BDN-F085
Price: 13.31 USD
Availability: InStock

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Mouser No:

863-FFSH4065BDN-F085

Mfr. No:

FFSH4065BDN-F085

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V

Datasheet:

FFSH4065BDN-F085 Datasheet

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In Stock: 680

Stock:: 680 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$13.31	$13.31
	$8.07	$80.70
	$7.64	$916.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual Anode Common Cathode
If - Forward Current:	40 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	84 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSH4065BDN-F085
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	127 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V

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Datasheet

FFSH4065BDN-F085 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541590000
USHTS:: 8541100080
ECCN:: EAR99

FFSPx065BDN-F085 Automotive SiC Schottky Diodes

onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.