FM28V100-TGTR

Infineon Technologies
877-FM28V100-TGTR
FM28V100-TGTR

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM

Datasheet:
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Learn more about Infineon Technologies FM28V100-TGTR

In Stock: 2,739

Stock:
2,739 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$25.86 $25.86
$23.96 $239.60
$23.19 $579.75
$22.63 $1,131.50
$22.06 $2,206.00
$21.33 $5,332.50
$20.40 $10,200.00
$18.06 $18,060.00
Full Reel (Order in multiples of 1500)
$16.30 $24,450.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
FM28V100-TG
Packaging:
Tray
Availability:
In Stock
Price:
$25.36
Min:
1

Similar Product

Infineon Technologies FM28V100-TG
Infineon Technologies
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
Parallel
128 k x 8
TSOP-32
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V100-TG
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 1500
Subcategory: Memory & Data Storage
Products found:
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Attributes selected: 0

Datasheet

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8471600499
ECCN:
EAR99

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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