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GCMX020A120B3H1P

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Mouser No:

148-GCMX020A120B3H1P

Mfr. No:

GCMX020A120B3H1P

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module

Datasheet:

GCMX020A120B3H1P Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	93 A
Rds On - Drain-Source Resistance:	18.1 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Series:	GCMX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	SemiQ
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	18 ns
Product Type:	MOSFET Modules
Rise Time:	10 ns
Factory Pack Quantity:	40
Subcategory:	Discrete and Power Modules
Type:	Full Bridge
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	26 ns

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Datasheet

GCMX020A120B3H1P Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.