IPB95R450PFD7ATMA1

Infineon Technologies
726-IPB95R450PFD7ATM
IPB95R450PFD7ATMA1

Mfr.:

Description:
MOSFETs LOW POWER_NEW

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.20 $3.20
$2.09 $20.90
$1.45 $145.00
$1.22 $610.00
Full Reel (Order in multiples of 1000)
$1.10 $1,100.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
- 30 V, 30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel
Cut Tape
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Fall Time: 4.7 ns
Product Type: MOSFETs
Rise Time: 8.7 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 9 ns
Part # Aliases: IPB95R450PFD7 SP005547014
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).