IRF540ZPBF

Infineon Technologies
942-IRF540ZPBF
IRF540ZPBF

Mfr.:

Description:
MOSFETs MOSFT 100V 36A 26.5mOhm 42nC Qg

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 12,860

Stock:
12,860 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$1.27 $1.27
$0.781 $7.81
$0.719 $71.90
$0.568 $284.00
$0.518 $518.00
$0.496 $992.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
36 A
26.5 mOhms
- 20 V, 20 V
2 V
42 nC
- 55 C
+ 175 C
92 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: CN
Country of Diffusion: TW
Country of Origin: TW
Product Type: MOSFETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.