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R8002KND3TL1

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Mouser No:

755-R8002KND3TL1

Mfr. No:

R8002KND3TL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 800V 1.6A N-CH MOSFET

Datasheet:

R8002KND3TL1 Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor R8002KND3TL1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	1.6 A
Rds On - Drain-Source Resistance:	4.2 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	7.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	100 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	Power MOSFET
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	R8002KND3

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Datasheet

R8002KND3TL1 Datasheet

Specification Sheets

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

R8002KN N-Channel 800V 1.6A Power MOSFETs

ROHM Semiconductor R8002KN N-Channel 800V 1.6A Power MOSFETs are low on-resistance devices with fast switching. The R8002KN features Pb-free plating and is RoHS compliant. The MOSFETs have parallel use that is easy to use.