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SGT080R70ILB

Name: STMicroelectronics SGT080R70ILB
Brand: STMicroelectronics
SKU: 511-SGT080R70ILB
Price: 6.02 USD
Availability: OutOfStock

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Mouser No:

511-SGT080R70ILB

Mfr. No:

SGT080R70ILB

Mfr.:

STMicroelectronics

Description:

GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SGT080R70ILB Datasheet (PDF)

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Learn more about STMicroelectronics SGT080R70ILB

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Stock:: 0

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$6.02	$6.02
	$4.44	$44.40
	$3.60	$360.00
	$3.48	$1,740.00
	$3.36	$3,360.00
Full Reel (Order in multiples of 3000)
	$3.20	$9,600.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Fall Time:	4 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	FET
Product Type:	GaN FETs
Rise Time:	4 ns
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Type:	PowerGaN Transistor
Typical Turn-Off Delay Time:	5 ns
Typical Turn-On Delay Time:	3 ns
Unit Weight:	154 mg

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Datasheet

SGT080R70ILB Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT080R70ILB E-Mode PowerGaN Transistor

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor is an enhancement-mode transistor designed for high-efficiency power conversion applications. Featuring a drain-source voltage rating of 700V and a typical on-resistance of just 80mΩ, the STMicroelectronics SGT080R70ILB leverages the superior switching performance of Gallium Nitride (GaN) technology to minimize conduction and switching losses. Housed in a compact PowerFLAT 8x8 HV package, the transistor supports high-frequency operation and is ideal for use in resonant converters, power factor correction (PFC) stages, and DC-DC converters. A low gate charge and output capacitance enable faster transitions and reduced energy dissipation, making the SGT080R70ILB well-suited for demanding applications in consumer electronics, industrial systems, and data centers.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.