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SIR5607DP-T1-RE3

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See Product Specifications

Mouser No:

78-SIR5607DP-T1-RE3

Mfr. No:

SIR5607DP-T1-RE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs P-CHANNEL 60-V (D-S) MOSFET

Datasheet:

SIR5607DP-T1-RE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay / Siliconix SIR5607DP-T1-RE3

Delivery Restriction:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	90.9 A
Rds On - Drain-Source Resistance:	7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	31.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	20 ns
Forward Transconductance - Min:	52 S
Product Type:	MOSFETs
Rise Time:	320 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	45 ns

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Datasheet

SIR5607DP-T1-RE3 Datasheet

PCN

Product Change Notification 2024-11-01 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low R_DS(on). These power MOSFETs offer 30V V_DS and very low R_DS x Q_g Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A I_D and 19.9nC Q_g. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A I_D and 21nC Q_g. This 100% R_g and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.