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GP3T080A120H

Name: SemiQ GP3T080A120H
Brand: SemiQ
SKU: 148-GP3T080A120H
Price: 5.3 USD
Availability: InStock

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See Product Specifications

Mouser No:

148-GP3T080A120H

Mfr. No:

GP3T080A120H

Mfr.:

SemiQ

Description:

SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GP3T080A120H Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SemiQ GP3T080A120H

In Stock: 134

Stock:: 134 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.30	$5.30
	$3.84	$38.40
	$2.75	$330.00
	$2.52	$1,285.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 4.5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	147 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	9 ns
Forward Transconductance - Min:	6 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	4 ns
Series:	GP3T
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

GP3T080A120H Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.