It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IAUCN04S7N040HATMA1

Name: Infineon IAUCN04S7N040HATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN04S7N040HAT
Price: 2.03 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IAUCN04S7N040HAT

Mfr. No:

IAUCN04S7N040HATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power-Transistor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUCN04S7N040HATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IAUCN04S7N040HATMA1

In Stock: 864

Stock:: 864 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.03	$2.03
	$1.30	$13.00
	$0.872	$87.20
	$0.692	$346.00
	$0.606	$606.00
	$0.60	$1,500.00
Full Reel (Order in multiples of 5000)
	$0.577	$2,885.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	82 A
Rds On - Drain-Source Resistance:	4.01 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	52 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	9 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	IAUCN04S7N040H SP006008355

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IAUCN04S7N040HATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 40V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 40V Automotive Power MOSFETs are high-current low R_DS(on) MOSFETs with optimized switching behavior. These N-channel automotive MOSFETs offer high power density, low conduction losses, and high current density. The OptiMOS™ 7 MOSFETs come in a 3mm x 3mm advanced leadless package with Cu-Clip for low package Ron and minimum stray inductance. These MOSFETs are 100% avalanche tested and RoHS compliant. The OptiMOS™ 7 MOSFETs are ideal for applications such as power distribution, window-lift, power-seat, high-redundancy EPS, and body control modules.

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.