STMicroelectronics Discrete Semiconductors

Results: 4,073
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS Product Type Technology Mounting Style Package/Case
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SiC MOSFETS SiC SMD/SMT TOLL-8
STMicroelectronics MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

MOSFETs Si Through Hole TO-220FP-3
STMicroelectronics MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

MOSFETs Si Through Hole TO-220FP-3

STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

IGBTs Si SMD/SMT HU3PAK-7
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

IGBTs Si Through Hole TO-247-3
STMicroelectronics MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET

MOSFETs
STMicroelectronics MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET

MOSFETs
STMicroelectronics SiC Schottky Diodes 650 V, 20A High surge Silicon Carbide power Schottky diode

SiC Schottky Diodes Through Hole DO-247-2
STMicroelectronics TN8050H-12PI
STMicroelectronics SCRs 80 A 1200 V High Temperature SCR Thyristor

SCRs
STMicroelectronics Schottky Diodes & Rectifiers Aerospace 45 V power Schottky rectifier - Engineering model
Schottky Diodes & Rectifiers Si SMD/SMT LCC-2B
STMicroelectronics Schottky Diodes & Rectifiers Aerospace 40 V 3 A power Schottky rectifier - Engineering model
Schottky Diodes & Rectifiers Si SMD/SMT LCC-2B
STMicroelectronics Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
BJTs - Bipolar Transistors Si SMD/SMT UB-4
STMicroelectronics Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
BJTs - Bipolar Transistors Si SMD/SMT UB-4
STMicroelectronics Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
BJTs - Bipolar Transistors Si SMD/SMT SMD.5


STMicroelectronics IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SiC MOSFETS SiC SMD/SMT H2PAK-7


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SiC MOSFETS SiC SMD/SMT H2PAK-7


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SiC MOSFETS SiC Through Hole HiP-247-4


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SiC MOSFETS SiC Through Hole Hip247-4


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SiC MOSFETS SiC Through Hole HiP-247-4

STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SiC MOSFETS SiC Through Hole HiP247-3


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SiC MOSFETS SiC Through Hole HiP-247-4


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SiC MOSFETS SiC Through Hole HiP-247-4


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SiC MOSFETS SiC Through Hole HiP-247-3


STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SiC MOSFETS SiC Through Hole HiP247-4