FF225R17ME7B11BPSA1

Infineon Technologies
726-FF225R17ME7B11BP
FF225R17ME7B11BPSA1

Mfr.:

Description:
IGBT Modules 1700 V, 225 A dual IGBT module

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In Stock: 7

Stock:
7 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$135.83 $135.83

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
RoHS:  
IGBT Silicon Modules
Dual
1.7 kV
1.7 V
225 A
100 nA
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Country of Assembly: HU
Country of Diffusion: AT
Country of Origin: AT
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw Mount
Product Type: IGBT Modules
Series: FFXR17MX7P
Factory Pack Quantity: 10
Subcategory: IGBTs
Technology: Si
Tradename: EconoDUAL
Part # Aliases: FF225R17ME7_B11 SP005548839
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Attributes selected: 0

CNHTS:
8504409100
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.

1700V Dual IGBT Modules

Infineon Technologies 1700V Dual IGBT Modules are qualified for industrial applications according to the relevant tests of IEC 60747, 60749, and 60068. The modules have electrical features like VCES = 1700V, IC nom up to 1500A/ICRM = 3000A. The devices also feature an integrated temperature sensor, high current density, and low VCE.