SemiQ GEN3 1200V SiC MOSFET Power Modules
SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [RDS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.
Features
- High-speed switching SiC MOSFETs
- Freewheeling SiC SBD with zero reverse recovery (COPACK - GCMS series)
- All parts tested to greater than 1400V
- Kelvin reference for stable operation
- Isolated backplate
- Low switching losses
- Low junction to case thermal resistance
- Avalanche tested to
- GCMX008C120S1-E1, GCMX016C120S1-E1, GCMS008C120S1-E1, GCMS016C120S1-E1 - 800mJ
- GCMX040C120S1-E1, GCMS040C120S1-E1 - 330mJ
- GCMX080C120S1-E1, GCMS080C120S1-E1 - 160mJ
- Very rugged and easy to mount
- Direct mounting to heatsink (isolated package)
- Lower QRR at high temperature (COPACK - GCMS series)
Applications
- Photovoltaic inverters
- Battery chargers
- Server power supplies
- Energy storage systems
Videos
Related SiC MOSFET Products
SemiQ SiC MOSFET Power Modules
Provides low on-state resistance at high temperatures with excellent switching performance.
SemiQ GEN3 1200V SiC MOSFET Discrete Devices
Developed to increase performance and cut switching losses in high-voltage applications.
Published: 2025-04-28
| Updated: 2025-08-12