RF MOSFET Transistors

Results: 627
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Qty. RoHS ECAD Model Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging
Toshiba RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 0.25W 20V
Datasheet
Non-Stocked
Min.: 3,000
Mult.: 3,000
Reel: 3,000

N-Channel Si 100 mA 20 V 520 MHz 13 dB 200 mW SMD/SMT SOT-343-4 Reel
Toshiba RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000
Reel: 1,000

N-Channel Si 4 A 20 V 520 MHz 10.8 dB 12 W SMD/SMT PW-X-4 Reel
NXP Semiconductors RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 2.6 A 105 V 1.03 GHz to 1.09 GHz 19.2 dB 700 W - 55 C + 150 C SMD/SMT NI-780GS-4L Reel
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V Non-Stocked Lead-Time 16 Weeks
Min.: 240
Mult.: 240
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 330 W + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet
Lead-Time 16 Weeks
Min.: 1
Mult.: 1

N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 240
Mult.: 240

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 24.4 dB 1.8 kW - 40 C + 150 C SMD/SMT OM-1230G-4 Reel
NXP Semiconductors RF MOSFET Transistors MV9 55W 12.5V TO270WB4
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

N-Channel Si 7.5 A 40 V 764 MHz to 940 MHz 17.5 dB 57 W - 40 C + 150 C SMD/SMT TO-270WB-4 Reel
NXP Semiconductors RF MOSFET Transistors MV9 800MHZ13.6V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

N-Channel Si 10 A 40 V 764 MHz to 941 MHz 15.7 dB 32 W - 40 C + 150 C SMD/SMT TO-270-2 Reel
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230G-4 Reel
NXP Semiconductors RF MOSFET Transistors VHV6 250W 50V NI780H
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 100 V 960 MHz to 1.215 GHz 20.3 dB 275 W + 150 C Screw Mount NI-780 Reel
NXP Semiconductors RF MOSFET Transistors VHV6 1400MHZ 50V
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 100 V 1.2 GHz to 1.4 GHz 18 dB 330 W + 150 C SMD/SMT NI-780S Reel
NXP Semiconductors RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 150
Mult.: 150
Reel: 150

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel
MACOM RF MOSFET Transistors Transistor,Mosfet,120W,2-175MHz,28V
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 20
Mult.: 20

N-Channel Si 6 mA 65 V 2 MHz to 175 MHz 13 dB 120 W SMD/SMT
MACOM RF MOSFET Transistors 5-175MHz 80Watts 28Volt Gain 13dB
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

N-Channel Si 9 A 65 V 200 MHz 13 dB 80 W - 65 C + 150 C SMD/SMT 221-11-3 Tray
MACOM RF MOSFET Transistors 5-500MHz 100Watts 28Volt Gain 8.8dB
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 20
Mult.: 20

N-Channel Si 13 A 65 V 500 MHz 8.8 dB 100 W - 65 C + 150 C SMD/SMT 333-04 Tray
MACOM RF MOSFET Transistors 100-500MHz 40Watts 28Volt Gain 10dB
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 20
Mult.: 20
N-Channel Si 65 V 100 MHz to 500 MHz 10 dB 40 W - 55 C + 150 C SMD/SMT 319-07 Tray
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

GaAs 90 mA to 120 mA 26 GHz 16 dB 25 dBm + 150 C Die Bulk
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

GaAs 160 mA to 200 mA 18 GHz 13 dB 28.5 dBm + 150 C Die Bulk
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

GaAs 40 mA to 60 mA 28 GHz 14 dB 21.5 dBm + 150 C Die Bulk
CML Micro RF MOSFET Transistors Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datasheet
Non-Stocked
Min.: 10
Mult.: 10

GaAs 60 mA to 80 mA 6.5 V 28 GHz 15 dB 23 dBm + 150 C Die Bulk
Ampleon RF MOSFET Transistors ART150PEG/REEL
Datasheet

N-Channel LDMOS 65 V 497 mOhms 1 MHz to 650 MHz 31.2 dB 150 W + 225 C SMD/SMT TO-270-2G-1-3 Reel
Ampleon RF MOSFET Transistors ART150PE/REELDP
Datasheet

N-Channel LDMOS 65 V 497 mOhms 1 MHz to 650 MHz 31.2 dB 150 W + 225 C SMD/SMT TO-270-2F-1-3 Reel
Ampleon RF MOSFET Transistors ART1K6FHG/SOT1248/REEL
Datasheet

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT1248C-5 Reel
Ampleon RF MOSFET Transistors ART1K6FHS/SOT539/TRAY
Datasheet

Dual N-Channel LDMOS 55 V 84 mOhms 1 MHz to 425 MHz 28 dB 1.6 kW + 225 C SMD/SMT SOT539BN-5 Tray