STGFW40V60DF

STMicroelectronics
511-STGFW40V60DF
STGFW40V60DF

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 600   Multiples: 300
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$1.51 $906.00
$1.38 $1,656.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
STGFW40V60DF
Tube
Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.8 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Continuous Collector Current Ic Max: 40 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Package/Case: TO-3PF
Pd - Power Dissipation: 62.5 W
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Technology: Si
Unit Weight: 7 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.